Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Abstract Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with th...

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Bibliografiske detaljer

Principais autores:	Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Format:	Artigo
Sprog:	Inglês
Udgivet:	SpringerOpen 2017-06-01
Serier:	Nanoscale Research Letters
Fag:	Gallium nitride Heterostructure IR reflectance Transfer matrix method Carrier concentration Mobility
Online adgang:	http://link.springer.com/article/10.1186/s11671-017-2171-0
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