QR-koodi

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Abstract Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with th...

Täydet tiedot

Tallennettuna:
Päätekijät: Bogdan I. Tsykaniuk, Andrii S. Nikolenko, Viktor V. Strelchuk, Viktor M. Naseka, Yuriy I. Mazur, Morgan E. Ware, Eric A. DeCuir, Bogdan Sadovyi, Jan L. Weyher, Rafal Jakiela, Gregory J. Salamo, Alexander E. Belyaev
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: SpringerOpen 2017-06-01
Sarja:Nanoscale Research Letters
Aiheet:
Gallium nitride
Heterostructure
IR reflectance
Transfer matrix method
Carrier concentration
Mobility
Linkit:http://link.springer.com/article/10.1186/s11671-017-2171-0
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!

Samankaltaisia teoksia