Demonstration of gallium oxide nano-pillar field emitter arrays
We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision....
Guardat en:
| Autors principals: | , , , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2023-07-01
|
| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/5.0145200 |
| Etiquetes: |
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|