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Resistive Switching Acceleration Induced by Thermal Confinement

Abstract Enhancing the switching speed of oxide‐based memristive devices at a low voltage level is crucial for their use as non‐volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to accelerate the switching speed often result in an energy...

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Principais autores: Alexandros Sarantopoulos, Kristof Lange, Francisco Rivadulla, Stephan Menzel, Regina Dittmann
פורמט: Artigo
שפה:Inglês
יצא לאור: Wiley-VCH 2025-03-01
סדרה:Advanced Electronic Materials
נושאים:
resistive switching
switching speed
thermal management
גישה מקוונת:https://doi.org/10.1002/aelm.202400555
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