Resistive Switching Acceleration Induced by Thermal Confinement
Abstract Enhancing the switching speed of oxide‐based memristive devices at a low voltage level is crucial for their use as non‐volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to accelerate the switching speed often result in an energy...
Kaydedildi:
| Asıl Yazarlar: | , , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-03-01
|
| Seri Bilgileri: | Advanced Electronic Materials |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/aelm.202400555 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|