Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device

In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. The experiment of channel release showed that the stress ca...

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Detalhes bibliográficos

Principais autores:	Jingwen Yang, Kun Chen, Dawei Wang, Tao Liu, Xin Sun, Qiang Wang, Ziqiang Huang, Zhecheng Pan, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, David Wei Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-03-01
coleção:	Micromachines
Assuntos:	Gate-All-Around (GAA) stress nanosheet length channel release nanosheet deformation
Acesso em linha:	https://www.mdpi.com/2072-666X/14/3/611
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