Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures
Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center, have recently emerged as extremely attractive...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
MDPI AG
2020-02-01
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| Cyfres: | Nanomaterials |
| Pynciau: | |
| Mynediad Ar-lein: | https://www.mdpi.com/2079-4991/10/2/361 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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