Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

Highlights Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon ele...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Igor A. Khramtsov, Dmitry Yu. Fedyanin
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	SpringerOpen 2021-03-01
Цуврал:	Nano-Micro Letters
Нөхцлүүд:	Color centers Electron capture cross section Single-photon emitting diodes Single-photon electroluminescence Charge state control
Онлайн хандалт:	https://doi.org/10.1007/s40820-021-00600-y
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!