Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminatin...
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| Autors principals: | , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2017-06-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | http://www.mdpi.com/2073-4352/7/6/163 |
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