Tilt boundary formation in GeSi/Si (001) vicinal heterosystem

The structural state of GexSi1-x films grown on Si substrates with the vicinal orientation (1 1 13) has been studied. The (1 1 13) orientation has been obtained by rotating the singular plane (001) around the [1 1 ¯0] axis. The x parameter of GexSi1-x films in different samples ranged from 0.083 to...

Descripció completa

Dades bibliogràfiques

Autors principals:	Aleksei V. Kolesnikov, Evgenii M. Trukhanov, Aleksandr S. Ilin, Ivan D. Loshkarev
Format:	Artigo
Idioma:	Inglês
Publicat:	Pensoft Publishers 2015-03-01
Col·lecció:	Modern Electronic Materials
Matèries:	Silicon Germanium X-ray diffractometry Misfit dislocations
Accés en línia:	http://www.sciencedirect.com/science/article/pii/S2452177915000109
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!