Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices
Over the last few years, great advances have been achieved in exploration of high-mobility two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble-transition-metal dichalcogenide PdSe2. These materials are competitive candidates for constructing next-generation optoelectronic d...
Tallennettuna:
| Päätekijät: | , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Elsevier
2023-05-01
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| Sarja: | Journal of Materiomics |
| Aiheet: | |
| Linkit: | http://www.sciencedirect.com/science/article/pii/S235284782200154X |
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