Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices
Over the last few years, great advances have been achieved in exploration of high-mobility two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble-transition-metal dichalcogenide PdSe2. These materials are competitive candidates for constructing next-generation optoelectronic d...
保存先:
| 主要な著者: | , , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Elsevier
2023-05-01
|
| シリーズ: | Journal of Materiomics |
| 主題: | |
| オンライン･アクセス: | http://www.sciencedirect.com/science/article/pii/S235284782200154X |
| タグ: |
タグなし, このレコードへの初めてのタグを付けませんか!
|