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Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

SiO<sub>2</sub> films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO<sub>2</sub> films. On the top of the graphene layer, either continuous HfO<sub>2</sub> or SiO<su...

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Principais autores: Tauno Kahro, Kristina Raudonen, Joonas Merisalu, Aivar Tarre, Peeter Ritslaid, Aarne Kasikov, Taivo Jõgiaas, Tanel Käämbre, Markus Otsus, Jekaterina Kozlova, Harry Alles, Aile Tamm, Kaupo Kukli
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2023-04-01
coleção:Nanomaterials
Assuntos:
silicon oxide
hafnium oxide
resistive switching
graphene
stacked nanostructures
atomic layer deposition
Acesso em linha:https://www.mdpi.com/2079-4991/13/8/1323
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