QR-koodi

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

SiO<sub>2</sub> films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO<sub>2</sub> films. On the top of the graphene layer, either continuous HfO<sub>2</sub> or SiO<su...

Täydet tiedot

Tallennettuna:
Päätekijät: Tauno Kahro, Kristina Raudonen, Joonas Merisalu, Aivar Tarre, Peeter Ritslaid, Aarne Kasikov, Taivo Jõgiaas, Tanel Käämbre, Markus Otsus, Jekaterina Kozlova, Harry Alles, Aile Tamm, Kaupo Kukli
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI AG 2023-04-01
Sarja:Nanomaterials
Aiheet:
silicon oxide
hafnium oxide
resistive switching
graphene
stacked nanostructures
atomic layer deposition
Linkit:https://www.mdpi.com/2079-4991/13/8/1323
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!

Samankaltaisia teoksia