Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/A...

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Detalhes bibliográficos

Principais autores:	Chi-Tsung Tasi, Wei-Kai Wang, Sin-Liang Ou, Shih-Yung Huang, Ray-Hua Horng, Dong-Sing Wuu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2018-09-01
coleção:	Nanomaterials
Assuntos:	AlGaN nanopatterned sapphire substrate hydride vapor phase epitaxy stress transmission electron microscopy
Acesso em linha:	http://www.mdpi.com/2079-4991/8/9/704
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