Mechanism of gate voltage spike under digital gate control at IGBT switching operations
This paper reports the mechanism of gate voltage spike in the turn-off operation by a digital gate control. In the previous work, it was clarified that the gate voltage spike Vg_spike was generated by parasitic inductance and a large gate current change due to the digital gate control. However, the...
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| Главные авторы: | , , , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Elsevier
2024-04-01
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| Серии: | Power Electronic Devices and Components |
| Предметы: | |
| Online-ссылка: | http://www.sciencedirect.com/science/article/pii/S2772370423000226 |
| Метки: |
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