Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection

Abstract The Fowler–Nordheim (FN) tunneling scheme is constrained by its high operating voltage requirement and poor energy efficiency, posing significant technical challenges. In response, Hot Carrier Injection (HCI) - based programming methods have been explored as promising alternatives for achie...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Moonchurl Kim, Jiwook Hong, Choasub Kim, Soo Jin Kim, Sungyung Hwang, Seung Jae Baik, Jongwook Jeon
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Nature Portfolio 2025-10-01
Sarja:	Scientific Reports
Aiheet:	NAND flash FN tunneling Hot-carrier injection Program Self-boosting channel
Linkit:	https://doi.org/10.1038/s41598-025-19858-y
Tagit:	Lisää tagi Ei tageja, Lisää ensimmäinen tagi!