Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection

Abstract The Fowler–Nordheim (FN) tunneling scheme is constrained by its high operating voltage requirement and poor energy efficiency, posing significant technical challenges. In response, Hot Carrier Injection (HCI) - based programming methods have been explored as promising alternatives for achie...

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Bibliografische Detailangaben

Hauptverfasser:	Moonchurl Kim, Jiwook Hong, Choasub Kim, Soo Jin Kim, Sungyung Hwang, Seung Jae Baik, Jongwook Jeon
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Nature Portfolio 2025-10-01
Schriftenreihe:	Scientific Reports
Schlagworte:	NAND flash FN tunneling Hot-carrier injection Program Self-boosting channel
Online-Zugang:	https://doi.org/10.1038/s41598-025-19858-y
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