Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics

In this work, we adopt a low-temperature sustainable plasma treatment approach for the fabrication of ferroelectric memory devices. From our experimental results, we found that the ferroelectric polarization characteristics of HfAlO _x ferroelectric device could be further improved by using low-temp...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής

Κύριοι συγγραφείς:	Cun-Bo Liu, Ruo-Yin Liao, Hsuan-Han Chen, Zhi-Wei Zheng, Kuan-Hung Su, I-Cheng Lin, Ting-An Liang, Ping-Yu Lin, Chen-Hao Wen, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Μορφή:	Artigo
Γλώσσα:	Inglês
Έκδοση:	IOP Publishing 2024-01-01
Σειρά:	Materials Research Express
Θέματα:	hafnium aluminum oxide ferroelectric plasma
Διαθέσιμο Online:	https://doi.org/10.1088/2053-1591/ad4005
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