Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging

Robust bonding of Cu quasi-nanoparticles sintering for Ag coated chip and bare copper substrate was achieved. The effect of temperature, pressure and time on the sintering bonding strength and microstructural evolution was deeply studied. 36.5 MPa shear strength was achieved when applied 5 MPa press...

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Detalhes bibliográficos

Principais autores:	Xu Liu, Shizhen Li, Jiajie Fan, Jing Jiang, Yang Liu, Huaiyu Ye, Guoqi Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2022-07-01
Colecção:	Journal of Materials Research and Technology
Assuntos:	Sintered Cu Shear strength Microstructural evolution Failure mechanism SiC MOSFET packaging
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S2238785422007839
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