The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperature thermal diffusion of boron into silicon. The po...
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| Autores principales: | , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
National Institute of Telecommunications
2023-06-01
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| Colección: | Journal of Telecommunications and Information Technology |
| Materias: | |
| Acceso en línea: | https://jtit.pl/jtit/article/view/823 |
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