Effects of plasma gas interface processing on ferroelectric property of TiN/Hf0.5Zr0.5O2/TiN ferroelectric device

HZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics. Plasma gas interface processing can regulate the oxygen vacancy distribution, improve the interface state and increase the per...

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Detalles Bibliográficos

Principais autores:	Wang Zhenhua, Hou Jingwen, Li Zewen, Wang Yuchan, Wang Fang, Zhang Bao, Li QianHui, Xu ChuHeng, Gong Xin, Wang Qi, Han Yemei, Hu Kai, Zhang Kailiang
Formato:	Artigo
Idioma:	Inglês
Publicado:	De Gruyter 2026-02-01
Series:	High Temperature Materials and Processes
Assuntos:	hzo ferroelectric capacitors thickness optimistic nh3 passivation two-element coordinate passivation mechanism
Acceso en liña:	https://doi.org/10.1515/htmp-2025-0098
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