"WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS "

The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous sili...

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Principais autores:	Z.Zh. Zhanabaev, S.B. Ikramova, A.O. Tileu, D.A. Turlykozhaeva
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	Buketov Karaganda National Research University 2020-09-01
סדרה:	Eurasian Physical Technical Journal
נושאים:	porous silicon, energy band gap, current-voltage, electrochemical etching, laser, chaos.
גישה מקוונת:	https://phtj.buketov.edu.kz/EPTJ/article/view/27
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