"WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS "
The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous sili...
Gorde:
| Egile Nagusiak: | , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Buketov Karaganda National Research University
2020-09-01
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| Saila: | Eurasian Physical Technical Journal |
| Gaiak: | |
| Sarrera elektronikoa: | https://phtj.buketov.edu.kz/EPTJ/article/view/27 |
| Etiketak: |
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