Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping
In this study, the p-type Ga-doped Cu3Sb1−xGaxSe4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu3Sb1−xGaxSe4 compounds were investigated. As Ga content increased, the hole concentration of Cu3Sb1−xGaxSe4 compounds...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2017-10-01
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| Edice: | Energies |
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| On-line přístup: | https://www.mdpi.com/1996-1073/10/10/1524 |
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