Development of 6-inch h-BN thick wafers
We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate B...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2025-06-01
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| coleção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/5.0276437 |
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