Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions

Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporat...

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Detalhes bibliográficos

Principais autores:	Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Yacine Halfaya, Simon Gautier, Paul L. Voss, Ali Ahaitouf, Jean Paul Salvestrini, Abdallah Ougazzaden
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-01-01
coleção:	Nanomaterials
Assuntos:	h-BN magnesium doping wide bandgap heterojunction
Acesso em linha:	https://www.mdpi.com/2079-4991/11/1/211
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