Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Abstract Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase...

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Auteurs principaux:	Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Format:	Artigo
Langue:	Inglês
Publié:	Nature Portfolio 2017-04-01
Collection:	Scientific Reports
Accès en ligne:	https://doi.org/10.1038/s41598-017-00865-7
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