Properties and Mechanism of PEALD-In₂O₃ Thin Films Prepared by Different Precursor Reaction Energy

Indium oxide (In₂O₃) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In₂O₃ film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors...

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Bibliographic Details

Main Authors:	Ming-Jie Zhao, Zhi-Xuan Zhang, Chia-Hsun Hsu, Xiao-Ying Zhang, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Format:	Artigo
Language:	Inglês
Published:	MDPI AG 2021-04-01
Series:	Nanomaterials
Subjects:	indium oxide plasma-enhanced atomic layer deposition (PEALD) substrate temperature high growth rate precursor reaction energy
Online Access:	https://www.mdpi.com/2079-4991/11/4/978
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