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Properties and Mechanism of PEALD-In<sub>2</sub>O<sub>3</sub> Thin Films Prepared by Different Precursor Reaction Energy

Indium oxide (In<sub>2</sub>O<sub>3</sub>) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In<sub>2</sub>O<sub>3</sub> film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors...

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Principais autores: Ming-Jie Zhao, Zhi-Xuan Zhang, Chia-Hsun Hsu, Xiao-Ying Zhang, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2021-04-01
Series:Nanomaterials
Assuntos:
indium oxide
plasma-enhanced atomic layer deposition (PEALD)
substrate temperature
high growth rate
precursor reaction energy
Acceso en liña:https://www.mdpi.com/2079-4991/11/4/978
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