Design-Oriented Single-Piece Explicit <italic>I</italic>-<italic>V</italic> DC Charge-Based Model for MOS Transistors in Nanometric Technologies

This paper proposes a design-oriented DC model for MOS transistors in advanced nanometric technologies, based on only six parameters. The proposed model is based on the inversion charge and includes the main short-channel effects for accurately describing the behavior of the transistor DC drain curr...

Descrición completa

Detalles Bibliográficos

Principais autores:	Julien Poupon, Manuel J. Barragan, Andreia Cathelin, Sylvain Bourdel
Formato:	Artigo
Idioma:	Inglês
Publicado:	IEEE 2024-01-01
Series:	IEEE Access
Assuntos:	ACM charge-based MOSFET model design-oriented MOSFET model EKV FD-SOI Lambert W-function
Acceso en liña:	https://ieeexplore.ieee.org/document/10705306/
Tags:	Engadir etiqueta Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!