Design-Oriented Single-Piece Explicit <italic>I</italic>-<italic>V</italic> DC Charge-Based Model for MOS Transistors in Nanometric Technologies

This paper proposes a design-oriented DC model for MOS transistors in advanced nanometric technologies, based on only six parameters. The proposed model is based on the inversion charge and includes the main short-channel effects for accurately describing the behavior of the transistor DC drain curr...

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Autors principals:	Julien Poupon, Manuel J. Barragan, Andreia Cathelin, Sylvain Bourdel
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2024-01-01
Col·lecció:	IEEE Access
Matèries:	ACM charge-based MOSFET model design-oriented MOSFET model EKV FD-SOI Lambert W-function
Accés en línia:	https://ieeexplore.ieee.org/document/10705306/
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