Unveiling chemical and physical bulk defects in ultrathin indium oxide transistors with yttrium oxide capping via nanoscale channel thickness modulation

Ultrathin indium oxide (InOx) semiconductors are promising candidates for overcoming the performance limits of oxide electronics. In this study, the chemical and physical bulk defects in ultrathin InOx are clarified to improve the positive bias stability of chemical-solution-deposited InOx thin-film...

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Hlavní autoři:	Dohyeon Gil, Se Jin Park, Jinhong Park, Jae Wook Ahn, Minsu Choi, Jaewon Jang, Honghwi Park, Jaehoon Park, Xue Zhang, Jin-Hyuk Bae, Do-Kyung Kim
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2026-01-01
Edice:	Materials & Design
Témata:	Thin-film transistors Ultrathin indium oxide Bulk defects Channel thickness Positive bias instability
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S0264127525018313
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