Código QR (código de barras bidimensional)

Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter

In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work...

ver descrição completa

Na minha lista:
Principais autores: Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2025-01-01
coleção:Micromachines
Assuntos:
PD-SOI
junctionless FET
buried layer
CMOS inverter
Acesso em linha:https://www.mdpi.com/2072-666X/16/1/106
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registros relacionados