Hybrid Nonlinear InAs/2D‐Graphene/SiO2 Plasmonic Waveguides at 3.55–4.55 μm Mid‐IR: Optical Characterization and Performance
Outstanding optical and electronic properties of indium arsenide (InAs) as III–V semiconductor (high refractive index, high electron mobility, direct and narrow energy bandgap, low free‐carrier relaxation time, and high Kerr nonlinear coefficient) make it an attractive material for designing nanosca...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Wiley-VCH
2026-04-01
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| シリーズ: | Advanced Photonics Research |
| 主題: | |
| オンライン・アクセス: | https://doi.org/10.1002/adpr.202500244 |
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