Hybrid Nonlinear InAs/2D‐Graphene/SiO2 Plasmonic Waveguides at 3.55–4.55 μm Mid‐IR: Optical Characterization and Performance

Outstanding optical and electronic properties of indium arsenide (InAs) as III–V semiconductor (high refractive index, high electron mobility, direct and narrow energy bandgap, low free‐carrier relaxation time, and high Kerr nonlinear coefficient) make it an attractive material for designing nanosca...

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Detalles Bibliográficos

Principais autores:	A. B. Traseira Pena, J. C. Rodríguez García, R. J. Pérez Menéndez
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2026-04-01
Series:	Advanced Photonics Research
Assuntos:	2D‐graphene confinement factor dielectric permittivity electrical conductivity hybrid plasmonic waveguide Kerr nonlinear coefficient
Acceso en liña:	https://doi.org/10.1002/adpr.202500244
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