Investigation of structural, mechanical, electronic and optical responses of Ga doped aluminum arsenide for optoelectronic applications: By first principles

Owing to the rapidly increasing performance of ternary semiconductors; Aluminium Gallium Arsenide (Al1-xGaxAs; x = 0, 0.25, 0.50, 0.75) has been studied by first-principles calculations in Cambridge Serial Total Energy Package (CASTEP-Code). Density functional theory in the frame of full potential l...

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Autores principales:	Anwar Ali, Abdul Waheed Anwar, Muhammad Moin, Mehrunisa Babar, Udayabhaskararao Thumu
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Elsevier 2024-01-01
Colección:	Heliyon
Materias:	Aluminium gallium arsenide Refractive index Band gap engineering Specific heat Bulk modulus Born stability
Acceso en línea:	http://www.sciencedirect.com/science/article/pii/S2405844024006285
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