Investigation of structural, mechanical, electronic and optical responses of Ga doped aluminum arsenide for optoelectronic applications: By first principles

Owing to the rapidly increasing performance of ternary semiconductors; Aluminium Gallium Arsenide (Al1-xGaxAs; x = 0, 0.25, 0.50, 0.75) has been studied by first-principles calculations in Cambridge Serial Total Energy Package (CASTEP-Code). Density functional theory in the frame of full potential l...

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Hlavní autoři:	Anwar Ali, Abdul Waheed Anwar, Muhammad Moin, Mehrunisa Babar, Udayabhaskararao Thumu
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Elsevier 2024-01-01
Edice:	Heliyon
Témata:	Aluminium gallium arsenide Refractive index Band gap engineering Specific heat Bulk modulus Born stability
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2405844024006285
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