Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma densi...

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Autors principals:	Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2024-05-01
Col·lecció:	Scientific Reports
Matèries:	Compound semiconductor Radical enhanced metalorganic chemical vapor deposition Gallium nitride Growth rate GaN/GaN power device
Accés en línia:	https://doi.org/10.1038/s41598-024-61501-9
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