Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation

We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm². The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath the p-pad and...

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Hlavní autoři:	Pavel Kirilenko, Cesur Altinkaya, Daisuke Iida, Kazuhiro Ohkawa
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2022-12-01
Edice:	Crystals
Témata:	InGaN LED current blocking layer hydrogen passivation injection efficiency light extraction efficiency
On-line přístup:	https://www.mdpi.com/2073-4352/12/12/1733
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