Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and...

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Principais autores:	Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-03-01
Colecção:	Micromachines
Assuntos:	ferroelectricity electrostatic doping tunneling field-effect transistor TCAD polarity gate
Acesso em linha:	https://www.mdpi.com/2072-666X/14/3/672
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