Electron–phonon processes of the silicon-vacancy centre in diamond
We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ( ${\rm Si}{{{\rm V}}^{-}}$ ) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K–3...
Guardat en:
| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2015-01-01
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| Col·lecció: | New Journal of Physics |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/1367-2630/17/4/043011 |
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