Electron–phonon processes of the silicon-vacancy centre in diamond
We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ( ${\rm Si}{{{\rm V}}^{-}}$ ) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K–3...
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| Autores principales: | , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
IOP Publishing
2015-01-01
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| Colección: | New Journal of Physics |
| Materias: | |
| Acceso en línea: | https://doi.org/10.1088/1367-2630/17/4/043011 |
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