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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effects of physical parameters, for example structural...

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Principais autores: Atse Julien Eric N’Dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Yvon Cordier, Luong Viet Phung, Frédéric Morancho, Hassan Maher, Dominique Planson
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-04-01
Serier:Crystals
Fag:
cathodo-luminescence
micro-Raman spectroscopy
current-voltage I-V
GaN Schottky diodes
power electronic devices
Online adgang:https://www.mdpi.com/2073-4352/13/5/713
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