Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors
As technology develops, the stacked nanosheet (NS) structure demonstrates promise for use in future technology nodes. This study demonstrated the excellent performance of stacked-NS channels with junctionless gate-all-around thin-film transistors and compared the electrical characteristics of single...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2019-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/8811513/ |
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