Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers
We show that in manganese-doped topological insulator bismuth telluride layers, Mn atoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial lay...
Na minha lista:
| Principais autores: | , , , , , , , , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IOP Publishing
2015-01-01
|
| coleção: | New Journal of Physics |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1088/1367-2630/17/1/013028 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|