FORMATION OF POROUS SILICON IN THE PULSED GALVANOSTATIC MODE

The results of porous silicon formation by anodization of single crystalline silicon wafers in the pulsed galvanostatic mode are presented. Correlations between pore structure and anodization process parameters were determined. It was shown, that porous silicon layers formed in pulsed mode have more...

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Detalhes bibliográficos

Principais autores:	E. B. Chubenko, S. V. Redko, A. I. Sherstnyov, V. A. Petrovich, V. P. Bondarenko
Formato:	Artigo
Idioma:	Russo
Publicado em:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
coleção:	Доклады Белорусского государственного университета информатики и радиоэлектроники
Assuntos:	пористый кремний импульсное электрохимическое анодирование полупроводниковая пористая матрица
Acesso em linha:	https://doklady.bsuir.by/jour/article/view/484
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