Código QR

Fabrication of Coaxial Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions

<p>Abstract</p> <p>We report on bifurcate reactions on the surface of well-aligned Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires were gr...

ver descrição completa

Na minha lista:
Principais autores: Kim Ilsoo, Lee Ki-Young, Kim Ungkil, Park Yong-Hee, Park Tae-Eon, Choi Heon-Jin
Formato: Artigo
Idioma:Inglês
Publicado em: SpringerOpen 2010-01-01
Colecção:Nanoscale Research Letters
Assuntos:
Si<sub>1&#8722;<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires
Coaxial heterostructure
Bifurcate reactions
Interfacial reaction
Diffusion-controlled reaction
Self-limiting oxidation
Kinetics of gas diffusion
Acesso em linha:http://dx.doi.org/10.1007/s11671-010-9673-3
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados