Fabrication of Coaxial Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> Heterostructure Nanowires by O<sub>2</sub> Flow-Induced Bifurcate Reactions
<p>Abstract</p> <p>We report on bifurcate reactions on the surface of well-aligned Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si<sub>1−<it>x</it></sub>Ge<sub><it>x</it></sub> nanowires were gr...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2010-01-01
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| Col·lecció: | Nanoscale Research Letters |
| Matèries: | |
| Accés en línia: | http://dx.doi.org/10.1007/s11671-010-9673-3 |
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