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Peculiarities of the SCLC Effect in Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Abstract High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 mm phosphate‐buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behav...

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Principais autores: Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Formato: Artigo
Idioma:Inglês
Publicado: Wiley-VCH 2024-07-01
Series:Advanced Electronic Materials
Assuntos:
GAA nanowire
noise spectroscopy
SCLC
single trap phenomena
two‐level RTS
Acceso en liña:https://doi.org/10.1002/aelm.202300855
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